Crucial T710 4TB
Samsung 9100 Pro 4TB

Crucial T710 4TB Samsung 9100 Pro 4TB

Common Features

  • Both drives share a random read speed of 2200000 IOPS.
  • Both drives use the M.2 form factor.
  • Both drives feature a DRAM cache.
  • Both drives are NVMe SSDs.
  • Both drives use NVMe version 2.
  • Both drives offer 4000GB of internal storage.
  • Both drives use TLC NAND flash storage.
  • Both drives connect via PCIe version 5.
  • Both drives have 8 controller channels.

Main Differences

  • Sequential read speed is 14500 MB/s on Crucial T710 4TB and 14800 MB/s on Samsung 9100 Pro 4TB.
  • Sequential write speed is 13800 MB/s on Crucial T710 4TB and 13400 MB/s on Samsung 9100 Pro 4TB.
  • Random write speed is 2300000 IOPS on Crucial T710 4TB and 2600000 IOPS on Samsung 9100 Pro 4TB.
  • The controller is the Silicon Motion SM2508 on Crucial T710 4TB and the Samsung Presto (S4LY027) on Samsung 9100 Pro 4TB.
Specs Comparison
Crucial T710 4TB

Crucial T710 4TB

Samsung 9100 Pro 4TB

Samsung 9100 Pro 4TB

Read speed:
sequential read speed 14500 MB/s 14800 MB/s
random read speed 2200000 IOPS 2200000 IOPS

In sequential read performance, the two drives are nearly identical, with the Samsung 9100 Pro edging ahead at 14800 MB/s versus the Crucial T710's 14500 MB/s — a difference of just 300 MB/s, or roughly 2%. At these extreme throughput levels, both drives are firmly in the top tier of Gen 5 NVMe performance, and in practice this gap will be imperceptible during everyday workloads like file transfers, game loading, or OS boot times.

Where it matters more is in random read performance, and here the two drives are in a dead heat at 2,200,000 IOPS each. Random IOPS is often the more telling metric for real-world responsiveness — it governs how quickly a drive handles the small, scattered read requests typical of multitasking, application launches, and database queries. A tie at this level means neither drive has a practical advantage in the workloads most users actually experience day to day.

Overall, read speed is essentially a draw. The Samsung 9100 Pro holds a marginal lead in sequential throughput, but the delta is too narrow to be meaningful outside of synthetic benchmarks. For any real-world use case, both drives will feel identical in read performance.

Write speed:
sequential write speed 13800 MB/s 13400 MB/s
random write speed 2300000 IOPS 2600000 IOPS

Write performance is where the two drives begin to diverge in a more interesting way. The Crucial T710 holds a modest lead in sequential write throughput at 13800 MB/s versus the Samsung 9100 Pro's 13400 MB/s — a ~3% advantage that, much like the sequential read gap, remains largely academic for most users. Large sequential writes such as copying huge video files or disk imaging are the only scenarios where this difference would even show up, and the margin is still too slim to feel.

The more consequential metric here is random write IOPS, and this is where the Samsung 9100 Pro asserts a real lead: 2,600,000 IOPS versus the T710's 2,300,000 IOPS, a gap of roughly 13%. Random write performance underpins some of the most demanding real-world workloads — think virtual machine storage, heavy compilation jobs, or professional applications that are constantly writing small chunks of data to disk. A 300,000 IOPS advantage is not a rounding error; it is a meaningful edge in sustained, mixed-workload environments.

On balance, write speed is a split verdict: the Crucial T710 wins on sequential throughput, while the Samsung 9100 Pro wins on random writes — and the latter is the more impactful metric for the users who will actually push these drives hardest. Power users and professionals should weight the 9100 Pro's random write lead more heavily; for general consumers, the difference is negligible either way.

General info:
type M2 M2
SSD cache DRAM cache DRAM cache
Is an NVMe SSD
NVMe version 2 2
internal storage 4000GB 4000GB
release date May 2025 February 2025
controller Silicon Motion SM2508 Samsung Presto (S4LY027)
SSD storage type TLC TLC
PCI Express (PCIe) version 5 5
Controller channels 8 8
Terabytes Written (TBW) 2400 2400
MTBF 1.5million hours 1.5million hours
warranty period 5 years 5 years
Has an integrated heatsink
bits of encryption supported 256 256
has RGB lighting

At the platform level, these two drives are built on virtually the same foundation. Both are M.2 NVMe SSDs leveraging PCIe 5.0 with NVMe 2.0, both use TLC NAND with a DRAM cache, and both deploy an 8-channel controller architecture. The shared specs extend to endurance and reliability too — identical 2,400 TBW ratings, 1.5 million hours MTBF, and 5-year warranties — meaning neither drive has a longevity or coverage advantage on paper.

The only meaningful differentiator in this group is the controller. The Crucial T710 uses the Silicon Motion SM2508, a third-party flagship controller that has earned strong credibility across multiple Gen 5 drives. The Samsung 9100 Pro, by contrast, runs Samsung's proprietary Presto (S4LY027) controller, developed and manufactured entirely in-house alongside Samsung's own NAND. Vertical integration of this kind historically gives Samsung tighter control over firmware optimization and the controller-NAND interface, which can translate to more consistent behavior under sustained load — though the specs alone do not quantify this.

For general configuration, this category is essentially a tie. The platform parity is striking, and neither drive holds a structural advantage in form factor, cache type, endurance, or warranty. The controller difference is the one thread worth pulling, and it is a qualitative distinction rather than a numerical one — making it a factor to weigh alongside real-world benchmark behavior rather than spec sheet values alone.

Comparison Summary & Verdict

This is a specification comparison between Crucial T710 4TB and Samsung 9100 Pro 4TB. Both products are M2 type SSDs with DRAM cache, 4000GB internal storage, TLC storage type, and support for PCI Express version 5. The Crucial T710 4TB offers a sequential read speed of 14500 MB/s and sequential write speed of 13800 MB/s, while the Samsung 9100 Pro 4TB has slightly faster speeds of 14800 MB/s for read and 13400 MB/s for write. Random write speed is 2300000 IOPS on Crucial T710 4TB and 2600000 IOPS on Samsung 9100 Pro 4TB. Additionally, the Crucial T710 4TB uses the Silicon Motion SM2508 controller, while the Samsung 9100 Pro 4TB uses the Samsung Presto (S4LY027) controller.